Stock Code: 430552
SGT MOSFET is an improved structure for Trench MOS. Compared to traditional Trench MOSFETs, SGT MOSFETs have added a polysilicon electrode below the gate electrode, which is a shielding electrode or coupling electrode. The shielding electrode is connected to the source electrode, which achieves the interaction between the shielding gate and the drift region, reduces the Miller capacitance, accelerates the switching speed of the device, and realizes the charge coupling effect, reduces the critical electric field strength of the drift region, reduces the conduction resistance of the device, and reduces the switching loss.
| Part Number | VDS (V) | ID (A) 25℃ | PD(W) 25℃ | RDS(ON)(mΩ) (VGS=10V)（Max） |
Qg(nC)(VGS=10V) （Typ） |
VGS(V) | VGS(th)(V) （Typ） |
Package | Design as AEC-Q100 |
|---|---|---|---|---|---|---|---|---|---|
| RMD100N15S-AU | 150 | 60 | 128 | 10 | 25 | 20 | 3.3 | PDFN5*6 | YES |
| RMD080N10S-AU | 100 | 69 | 72 | 8 | 62 | 20 | 3.3 | PDFN5*6 | YES |
| RMD040N10S-AU | 100 | 100 | 86 | 4 | 99 | 20 | 3.3 | PDFN5*6 | YES |
| RMR020N10S-AU | 100 | 188 | 352 | 2 | 186 | 20 | 3.3 | TOLL | YES |
| RMR015N08S-AU | 80 | 300 | 278 | 1.5 | 218 | 20 | 3.3 | TOLL | YES |
| RMD090N06SL-AU | 60 | 45 | 30 | 9 | 24 | 20 | 1.8 | PDFN5*6 | YES |
| RMD060N06SL-AU | 60 | 56 | 33 | 6 | 35 | 20 | 1.8 | PDFN5*6 | YES |
| RMB024N06SL-AU | 60 | 160 | 125 | 2.4 | 80 | 20 | 1.8 | TO-220 | YES |
| RMD024N06SL-AU | 60 | 160 | 125 | 2.4 | 80 | 20 | 1.8 | PDFN5*6 | YES |
| RMR015N04SL-AU | 40 | 160 | 125 | 1.5 | 89 | 20 | 1.6 | TOLL | YES |