Stock Code: 430552
SJ (super junction) MOSFET adopts a device structure based on charge balance, with a significant decrease in conduction resistance, and its advantage is particularly prominent under high voltage stress. In conventional VDMOS device structures, RDs (ON) and BV are shielded. As BV increases and EPI doping concentration decreases, the on resistance will inevitably increase; Super junction, on the other hand, increases the doping concentration of NEPI by adding a P-pillar to NEPI, forming a larger PN junction. When the device is reverse biased, a thick PN depletion layer is formed to achieve a high isolation voltage, thereby breaking the limit of the original VDMOS by RDs (oN)/BV.
| Part Number | VDS (V) | ID (A) 25℃ | PD(W) 25℃ | RDS(ON)(mΩ) (VGS=10V)（Max） |
Qg(nC)(VGS=10V) （Typ） |
VGS(V) | VGS(th)(V) （Typ） |
Package | Design as AEC-Q100 |
|---|---|---|---|---|---|---|---|---|---|
| RMA65R280SN-AU | 650 | 15 | 132 | 280 | 26 | 30 | 3.3 | TO-252 | YES |
| RME65R280SN-AU | 650 | 15 | 158 | 280 | 26 | 30 | 3.3 | TO-263 | YES |
| RMA65R380SN-AU | 650 | 11 | 118 | 380 | 19.2 | 30 | 3.3 | TO-252 | YES |
| RMA65R650SN-AU | 650 | 7 | 63 | 650 | 13.3 | 30 | 3.3 | TO-252 | YES |
| RMF60R038SF-AU | 600 | 70 | 694 | 38 | 191 | 30 | 4 | TO-247 | YES |
| RMF60R074SF-AU | 600 | 47 | 368 | 74 | 98 | 30 | 3.5 | TO-247 | YES |
| RME60R099SF-AU | 600 | 36 | 304.8 | 99 | 81 | 30 | 3.5 | TO-263 | YES |
| RMF60R099SF-AU | 600 | 36 | 304.8 | 99 | 81 | 30 | 3.5 | TO-247 | YES |
| RMF60R190SF-AU | 600 | 20 | 202 | 190 | 38.2 | 30 | 3.3 | TO-247 | YES |
| RME60R190SF-AU | 600 | 20 | 202 | 190 | 38.2 | 30 | 3.3 | TO-263 | YES |